Philips bft46 cnv free download

File name bft46_cnv.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BFT46 N-channel silicon FET Product specification December 1997 NXP Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low level general purpose handbook, halfpage 3 amplifiers in thick and thin-film circuits. d g s PINNING 1 2 1 = drain Top view MAM385 2 = source 3 = gate Note : Drain and source are Fig.1 Simplified outline and symbol, SOT23. interchangeable. Marking code BFT46 = M3p QUICK REFERENCE DATA Drain-source voltage VDS max. 25 V Gate-source voltage (open drain) VGSO max. 25 V Total power dissipation up to Tamb = 40 C Ptot max. 250 mW Drain current VDS = 10 V; VGS = 0 0,2 mA IDSS 1,5 mA Transfer admittance (common source) ID = 0,2 mA; VDS = 10 V; f = 1 kHz yfs 0,5 mS Equivalent noise voltage VDS = 10 V; ID = 200 A; B = 0,6 to 100 Hz Vn 0,5 V December 1997 2 NXP Semiconductors Product specification N-channel silicon FET BFT46 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage VDS max. 25 V Drain-gate voltage (open source) VDGO max. 25 V Gate-source voltage (open drain) VGSO max. 25 V Drain c